800nm to 1700nm Avalanche Photodetector Diode Laser Sensor – Asset Track Pro

800 nm to 1700 nm Avalanche Photodetector Diode Laser Sensor for precise laser reception and photodetection in various applications.

SKU: ATPOIS-103 Category:

Description

Features

  • Wide spectral range
  • High sensitivity
  • Through-hole mounting
  • Durable construction

 

Technical Specifications

Type Photodiode
Spectral Range 800 nm to 1700 nm
Mounting Type Through Hole
Output Analog
Material InGaAs
Breakdown Voltage 30 V to 200 V
Sensitivity 0.6 A or W at 1550 nm
Gain 10^4
Noise Equivalent Power 2.5 x 10^-14 W or √Hz
Response Time 1 ns
Capacitance 2 pF
Responsivity 0.5 A or W @ 1310 nm
Dark Current 1 nA
Temperature Coefficient -0.45 % or °C
Operating Temperature -4 °F to 131 °F (-20 °C to 55 °C)
Weight 1.76 oz (50 g)

Description

Features

  • Wide spectral range
  • High sensitivity
  • Through-hole mounting
  • Durable construction

 

Technical Specifications

Type Photodiode
Spectral Range 800 nm to 1700 nm
Mounting Type Through Hole
Output Analog
Material InGaAs
Breakdown Voltage 30 V to 200 V
Sensitivity 0.6 A or W at 1550 nm
Gain 10^4
Noise Equivalent Power 2.5 x 10^-14 W or √Hz
Response Time 1 ns
Capacitance 2 pF
Responsivity 0.5 A or W @ 1310 nm
Dark Current 1 nA
Temperature Coefficient -0.45 % or °C
Operating Temperature -4 °F to 131 °F (-20 °C to 55 °C)
Weight 1.76 oz (50 g)